Features of a Noise Pulse Formation when Switching a CMOS Element and Exposure to an Ionizing Particle
https://doi.org/10.56304/S2304487X20030098
Abstract
The results of modeling the AND and OR elements as components of the majority element are presented when switching inputs and simultaneously collecting charge from the particle track. The simulation is performed using 3D TCAD physical models of CMOS transistors according to the design rule of 65 nm bulk technology with shallow trench isolation of transistor groups for tracks with linear energy transfer of 60 MeV cm2/mg. It is found that the beginning of switching elements AND and OR at the inputs hardly affects the transient processes of the formation of noise pulses at the output of the element when collecting the charge from the track. The noise pulses are shifted in time by a time interval equal to the time offset of the track relative to the time of switching element inputs. Collection of the charge from the track leads either to switching an element in advance of the input signals changing or to an additional switching delay. The widths of the noise pulses at the outputs of the AND and OR elements are distributed in the range from 12 to 345 ps. At the same time, the duration of the noise pulse remains almost unchanged for the each specific track input point into the common area of the transistor location regardless of the time of formation of the track.
Supporting agencies: The work was carried out within the framework of the state task, the project No. 0065-2019-0008 “Architectural and circuit engineering methods for reducing energy consumption and increasing fault tolerance of microprocessors and communication controllers of high-performance computers”
About the Authors
V. Ya. Stenin
Scientific Research Institute of System Analysis, Russian Academy of Sciences; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
117218
115409
Moscow
Yu. V. Katunin
Scientific Research Institute of System Analysis, Russian Academy of Sciences
Russian Federation
Russian Federation
117218
Moscow
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Review
For citations:
Stenin V.Ya., Katunin Yu.V. Features of a Noise Pulse Formation when Switching a CMOS Element and Exposure to an Ionizing Particle. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2020;9(4):345-356. (In Russ.) https://doi.org/10.56304/S2304487X20030098
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