Effect of Build-In Electric Fields on the Hardness of GaP Light-Emitting Diodes to Gamma Irradiation
https://doi.org/10.56304/S2304487X21060080
Abstract
The effect of built-in electric fields on the hardness of light-emitting diodes (LEDs) based on monocrystalline gallium phosphide (wavelength of 655 nm) to gamma irradiation has been demonstrated for operating modes with and without separation of electron–hole pairs generated under irradiation in the builtin electric field of the p–n junction of a LED. Three stages of the light output power decreasing during gamma irradiation have been revealed. The possible physical reasons that served the formation of these stages of reducing the emission power of GaP LEDs have been discussed. It is shown that the separation of electron-hole pairs in the built-in field of the p–n junction increases their radiation hardness. This is confirmed by lower damage factors for stages I and II of power reduction for LEDs under the operating mode with the separation of electron–hole pairs generated under irradiation in the built-in electric field of the p–n junction under gamma irradiation.
Supporting agencies: The study was supported by the development program of Tomsk Polytechnic University
About the Authors
K. N. Orlova
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
115409
Moscow
A. V. Gradoboev
Tomsk Polytechnic University; Research Institute of Semiconductor Devices
Russian Federation
Russian Federation
634050
634034
Tomsk
A. V. Simonova
Scientific and Engineering Centre for Nuclear and Radiation Safety
Russian Federation
Russian Federation
115409
Moscow
F. F. Zhamaldinov
Tomsk Polytechnic University
Russian Federation
Russian Federation
634050
Tomsk
References
1. Wilson D. J., Schneider K., Hönl S, Anderson M., Baumgartner Ya., Czornomaz L., Kippenberg T. J. Seidler P. Integrated gallium phosphide nonlinear photonics. Nature Photonics. 2020, vol. 14, no. 1, pp. 57–62.
2. Gontaruk O. N., Kovalenko A. V., Konoreva O. V., Malyj E. V., Petrenko I. V., Pinkovskaya M. B., Tartachnik V. P. Elektrolyuminescenciya serijnyh svetodiodov GaP v zelenoj oblasti spektra [Electroluminescence of GaP serial LEDs in the green region of the spectrum]. Zhurnal prikladnoj spektroskopii. 2013, vol. 80, no. 6, pp. 859–863. (in Russian)
3. Frolov I. V., Radaev O. A., Sergeev V. A. Dinamicheskie harakteristiki i kvantovaya effektivnost' otdel’nyh spektral’nyh sostavlyayushchih spektra izlucheniya InGaN svetodiodov [Dynamic Characteristics and Quantum Efficiency of Individual Spectral Components of the Emission Spectrum of InGaN LEDs]. Zhurnal radioelektroniki. 2018, no. 9, pp. 1–14. (in Russian)
4. John S. Different Types of in Light Emitting Diodes (LED) Materials and Challenges-A Brief Review. International Journal for Research in Applied Science and Engineering Technology. 2018, vol. 6, pp. 4418–4420.
5. Kogan L. M. Svetodiody novogo pokoleniya dlya svetosignal’nyh i osvetitel’nyh priborov [New generation LEDs for lighting and lighting devices] Novosti svetotekhniki. 2001, no. 7–8, pp. 34–35. (in Russian)
6. Chang M. H., Das D., Varde P. V., Pecht M. Light emitting diodes reliability review. Microelectronics Reliability. 2012, vol. 52, no. 5, pp. 762–782.
7. Brudnyi V., Prudaev I., Oleinik V., Marmaluk A. Electron irradiation degradation of AlGaInP/GaAs light-emitting diodes. Physica status solidi (a). 2018, vol. 215, no. 8, p. 1700445.
8. Gradoboev A. V., Bondarenko E. A., Varlachev V. A., Yemets E. G., Sednev V. V. A Technique for Studying the Resistance of LEDS to Irradiation by Fast Neutrons at the IRT-T Reactor. Instruments and Experimental Techniques. 2021, vol. 64, no. 4, pp. 619–622.
9. Sergeev V. A., Frolov I. V., Radaev O. A. Svyaz’ parametrov fototoka svetodiodov na osnove GaN geterostruktur s izmeneniem ih harakteristik pri termotokovyh ispytaniyah [Correlation between the Photocurrent Parameters of LEDs Based on GaN Heterostructures and Changes in Their Characteristics during Thermal Current Tests]. Zhurnal radioelektroniki. 2019, no. 3, pp. 1–7. (in Russian)
10. Brudnyj V. N., Peshev V. V. Vliyanie elektronnogo (zaryadovogo) sostoyaniya E-lovushek na effektivnost' ih nakopleniya v n-GaAs pri obluchenii [Influence of the electronic (charge) state of E-traps on the efficiency of their accumulation in n-GaAs under irradiation] Fizika i tekhnika poluprovodnikov, 2003, vol. 37, no. 1, pp. 22–28 (in Russian).
11. Shubert F. E. Svetodiody [LEDs]. Moscow, 2008. 495 p. (in Russian).
12. Orlova K. N., Gradoboev A. V. Change in radiating power of the algainp heterostructures under irradiation by fast neutrons. 2014. 24th International Crimean Conference Microwave & Telecommunication Technology. IEEE, 2014, pp. 874–875.
13. Gradoboev A. V., Simonova A. V., Orlova K. N. Influence of irradiation by 60Co gamma-quanta on reliability of IR-LEDs based upon AlGaAs heterostructures. Physica status solidi (c). 2016, vol. 13, no. 10–12, pp. 895–902.
14. Gradoboev A. V., Orlova K. N., Aref’ev K. P., Asanov I. A. Issledovanie geterostruktur AlGaInP pri obluchenii gamma-kvantami v oblasti perestrojki defektnoj struktury [Investigation of AlGaInP heterostructures under gamma-ray irradiation in the area of defect structure rearrangement] Izvestiya vysshih uchebnyh zavedenij. Fizika, 2013, vol. 56, no. 11–3, pp. 116–119. (in Russian)
Review
For citations:
Orlova K.N., Gradoboev A.V., Simonova A.V., Zhamaldinov F.F. Effect of Build-In Electric Fields on the Hardness of GaP Light-Emitting Diodes to Gamma Irradiation. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2021;10(6):565-571. (In Russ.) https://doi.org/10.56304/S2304487X21060080
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