STUDY OF SOLID-STATE PORE IN SILICON NITRIDE MEMBRANE BY MEANS OF NUMERICAL MODELING
https://doi.org/10.26583/vestnik.2024.6.6
EDN: SGDDSR
Abstract
A promising system for creating new-generation biosensors is a solid-state pore whose size is comparable to the size of a molecule under study. The essence of particle detection and analysis consists in registration of ionic currents flowing through the pore. At the moment when a molecule of the investigated object penetrates the pore, the current value changes depending on the size and shape of the particle. Consequently, the scale of these changes can be a sign that allows detection of certain particles. Interpretation of the results of experiments on measuring the volt-ampere characteristics (VAC) of nanopores is a complex problem, one of the solutions of which can be the creation of a numerical model of a solid-state nanopore. The paper presents the creation of a mathematical model of the studied samples of solid-state pores in silicon nitride membrane in COMSOL MultiPhysics® program. The process of ionic current flow through pores of different diameters has been modeled and the corresponding VACs have been obtained. To verify the model, a method of measuring the VAC of real membrane samples has been created, which has been worked out during a number of experiments on measuring the VAC of samples with pores of 1–57 microns and 55–140 nm in diameter. It is found that the deviation of the modeling results from the experimental results is of the order of 30 % for measurements of pores with diameters smaller than 70 nm and does not exceed 10–15 % in other cases. The work shows the response of the system to the transmission of gold nanoparticles with a diameter of 40 nm. There are no full-scale works on creation of similar mathematical models of solid-state pores and their measurement in Russia. This work can serve as a starting point for a large series of experiments on the measurement of solid-state nanopores.
About the Authors
O. V. Zamiatina
National Research Nuclear University MEPhI;
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Design Center «Heterogeneous Integration»
Russian Federation
Russian Federation
E. M. Eganova
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Design Center «Heterogeneous Integration»
Russian Federation
Russian Federation
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For citations:
Zamiatina O.V., Eganova E.M. STUDY OF SOLID-STATE PORE IN SILICON NITRIDE MEMBRANE BY MEANS OF NUMERICAL MODELING. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2024;13(6):422-429. (In Russ.) https://doi.org/10.26583/vestnik.2024.6.6. EDN: SGDDSR
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