Use of a C-Element in Chains of Two-Phase CMOS Inverters to Block Noise Pulses Induced by Single Ionizing Particles
https://doi.org/10.1134/S2304487X20020133
Abstract
The TCAD simulation of noise pulses caused by the action of single ionizing particles on the elements of a chain of two-phase CMOS inverters with a C-element on a two-input inverter with the third state has been reported. A noise pulse on one of the inputs of the C-element is blocked, and the C-element stores the last output logical state on the capacitor of the output. The elements are modeled using the 65-nm CMOS bulk technology. Transient processes accompanying the collection of charge from tracks directed along the normal to the crystal surface, with the input points both in the drain area of transistors and at a distance of 0.3–0.65 μm from them have been analyzed. In the case of a track passing through a transistor drain or nearby, interference occurs only on one output of a two-phase inverter and can affect only one input of the next inverter or C-element. The C-element transits to a highly resistive state at the output to store its logical state regardless of the completion of transients in the inverter circuit. The duration of storage is 10–20 ns. The C-element switching delay is 25–40 ps.
Keywords
Supporting agencies: The study was carried out with the financial support of the Russian Foundation for Basic Research within the framework of the scientific project No. 19-07- 00651
About the Authors
V. Ya. Stenin
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); Scientific Research Institute of System Analysis, Russian Academy of Sciences
Russian Federation
Russian Federation
115409
117218
Moscow
Yu. V. Katunin
Scientific Research Institute of System Analysis, Russian Academy of Sciences
Russian Federation
Russian Federation
117218
Moscow
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Review
For citations:
Stenin V.Ya., Katunin Yu.V. Use of a C-Element in Chains of Two-Phase CMOS Inverters to Block Noise Pulses Induced by Single Ionizing Particles. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2020;9(2):166-176. (In Russ.) https://doi.org/10.1134/S2304487X20020133
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