ANALYSIS OF WATT-AMPERE CHARACTERISTICS OF LEDS MADE FROM VARIOUS MATERIALS
https://doi.org/10.26583/vestnik.2024.308
EDN: ZRTVZK
Abstract
The paper shows the changes in the watt-ampere characteristics shape of LEDs made from various semiconductor structures AlGaInP, InGaN and GaP with variation of the electron injection into the active region of the LED changes. It is shown that the light output power is a criterion parameter of LEDs, the main lighting characteristic and a function of the applied forward current. For LEDs based on AlGaInP with multiple quantum wells of various types of installation, a significant decrease in the emission power is observed for yellow LEDs. For GaP-based devices, an inverse relationship is observed. It has been suggested that impurity centers manifest themselves as nonradiative recombination centers. It is described with high accuracy for all types of LEDs by a single power function. It has been established that the exponent a determines the LEDs operating mode and characterizes the light output power of an individual LED and the photodiode sensitivity used in measurements in a photometric sphere. It is different for various current ranges. It is assumed that LEDs behave differently in the specified current ranges in the presence of any external influences (operation, aging, long-term operation, radiation exposure).
About the Authors
A. R. Rasul
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
K. N. Orlova
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
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Review
For citations:
Rasul A.R., Orlova K.N. ANALYSIS OF WATT-AMPERE CHARACTERISTICS OF LEDS MADE FROM VARIOUS MATERIALS. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2024;13(1):52-58. (In Russ.) https://doi.org/10.26583/vestnik.2024.308. EDN: ZRTVZK
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