Simulation of Error Pulses in Two-Phase CMOS Inverters at Charge Collection from the Track of an Ionizing Particle
https://doi.org/10.1134/S2304487X19030143
Abstract
Charge collection from the tracks of single ionizing particles by two-phase CMOS inverters with a design norm of 65 nm on two mutually connected channels (phases) forming a chain has been simulated. The occurrence of error pulses caused by charge collection from tracks directed along the normal to the surface of the device part of the crystal has been analyzed. The input points of particle tracks are at the drain areas of transistors or at a distance of 0.3–0.7 μm from them. The durations of error pulses on the nodes of the elements which collecting the charge from the track are from 120 to 300 ps. The amplitudes of pulses relative to the voltage on the power bus or common bus range from 0.05 to 1.0 V. The propagation of noise pulses along the chain of two-phase CMOS inverters occurs only for tracks with entry points into the drain area of transistors. If the linear energy transfer to the track is 60 MeV cm2 /mg, an error pulse can be transferred only to the next inverter if error pulses are formed at two outputs of the two-phase CMOS inverter and the sum of their amplitudes exceeds the supply voltage of the element.
Keywords
About the Authors
V. Ya. SteninRussian Federation
115409
117218
Moscow
Yu. V. Katunin
Russian Federation
117218
Moscow
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Review
For citations:
Stenin V.Ya., Katunin Yu.V. Simulation of Error Pulses in Two-Phase CMOS Inverters at Charge Collection from the Track of an Ionizing Particle. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2019;8(3):274-282. (In Russ.) https://doi.org/10.1134/S2304487X19030143