Determining Method for LEDs Electrophysical Characteristics
https://doi.org/10.26583/vestnik.2025.4.9
EDN: ZKYOXG
Abstract
A method is presented for analyzing the electrophysical characteristics of LEDs (hereinafter referred to as LEDs) made from various semiconductor materials of group AIIIBV under the influence of external factors (ionizing radiation, long-term operation, elevated temperature, electric fields, etc.). This technique is intended to determine the ohmic resistance of LEDs, and individual proportionality coefficients, which allow targeted investigation of degradation processes in LEDs. It is shown that characteristic areas of the operating current flow are distinguished on the volt-ampere characteristics (hereinafter referred to as I-V characteristics): the low-current region LT, the LED ohmic resistance region – R region, and the high-current region HT. It is shown that the sublinear section of the direct branch of the I-V characteristic of a device with a p-n junction can be extrapolated by a linear dependence, the slope of which is determined by its ohmic resistance. Physico-mathematical relationships have been determined for the ohmic resistance of LEDs made of any materials. For the studied LEDs based on AlGaInP (with and without multiple quantum wells), AlGaN with multiple quantum wells and single-crystal GaP, the ranges of cutoff voltages are determined when forward current flows. A technique is presented that can be used to analyze the operation of any devices whose operating principle is based on the use of a p-n junction and a Schottky barrier.
Supporting agencies: The work was carried out within the framework of funding for R & D “Development of new implantation methods for obtaining dielectric intermediate layers in semiconductor substrates for control systems of thermonuclear installations” No. 25 dated January 9, 2025.
About the Authors
K. N. Orlova
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
A. V. Gradoboev
Department of Experimental Physics, National Research Tomsk Polytechnic University
Russian Federation
Russian Federation
A. V. Beklemisheva
National Research Center “Kurchatov Institute”
Russian Federation
Russian Federation
A. R. Avanesyan
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
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Review
For citations:
Orlova K.N., Gradoboev A.V., Beklemisheva A.V., Avanesyan A.R. Determining Method for LEDs Electrophysical Characteristics. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2025;14(4):368-376. (In Russ.) https://doi.org/10.26583/vestnik.2025.4.9. EDN: ZKYOXG
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