High-dose implantation of low-energy helium ions
https://doi.org/10.26583/vestnik.2025.6.10
EDN: RXPWRH
Abstract
The issue of high-dose implantation of low-energy helium ions (24 keV) is being considered. In this case, the average projected range is at a depth of 20-30 nm from the sample surface. Implantation of helium ions into silicon is very attractive for creating buried porous layers in silicon during subsequent high-temperature annealing. A natural way to increase the porosity of the buried layer is to increase the implantation dose. However, this is hindered by radiation damage to the surface silicon (blistering and flecking), which makes it impossible to create electronic devices in the latter. As the implantation energy decreases, the implantation profile of embedded helium ions approaches the surface of the substrate, the proportion of vacancies and loosely bound near-surface atoms increases, affecting the course of diffusion processes, and the strength characteristics of the surface layer, including the porous layer, significantly change. It becomes possible to implant significantly higher doses of helium ions without mechanical damage to the surface silicon. The paper presents the results of a study of a buried porous layer after implantation of a dose of 1.75∙1017 He+/cm2 at an energy of 24 keV and subsequent high-temperature annealing at a temperature of 1150 ° C for 30 minutes. Huge pores with a diameter of 120-170 nm appear in the area of the initial concentration maximum. The porosity of this layer reaches 50%.
Keywords
helium ion implantation,
single-crystal silicon wafers,
subcritical implantation dose,
buried high-porosity layers
Supporting agencies: The work was carried out with the support of the National Research Center "Kurchatov Institute" R&D Center "Development of new implantation methods for obtaining dielectric intermediate layers in semiconductor substrates for control systems of thermonuclear installations" (order No. 25 of January 9, 2025).
About the Authors
S. G. Shemardov
National Research Center “Kurchatov Institute”
Russian Federation
Russian Federation
A. V. Beklemisheva
National Research Center “Kurchatov Institute”
Russian Federation
Russian Federation
P. A. Alexandrov
National Research Center “Kurchatov Institute”
Russian Federation
Russian Federation
A. L. Vasiliev
National Research Center “Kurchatov Institute”;
Moscow Institute of Physics and Technology (National Research University)
Russian Federation
Russian Federation
V. N. Beklemishev
National Research Center “Kurchatov Institute”;
State University of Management
Russian Federation
Russian Federation
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Review
For citations:
Shemardov S.G., Beklemisheva A.V., Alexandrov P.A., Vasiliev A.L., Beklemishev V.N. High-dose implantation of low-energy helium ions. Vestnik natsional'nogo issledovatel'skogo yadernogo universiteta "MIFI". 2025;14(6):553-557. (In Russ.) https://doi.org/10.26583/vestnik.2025.6.10. EDN: RXPWRH
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